Netherlands Institute for Subatomic Physics (NIKHEF) Science Park 105, 1098XG Amsterdam, The Netherlands
摘要: New developments in micro- and nano-electronics and related technologies allow to construct imagers that measure the properties of individual quanta of x-rays and other ionizing radiation. For example the wavelengths of individual x-ray photons can be determined, and also their arrival times. In contrast with charge-integrating CCD's and CMOS imagers, our detectors show no dark-current, and are free of thermal and electronic noise. Using different sensor materials (Si, GaAs, CdTe) the sensitivity range can be tuned to different energy ranges. Using gaseous sensors and gas-amplification, longer wavelengths until the UV can be reached.
The main disadvantage is the small sensitive area of ~2 cm2. An R&D program is ongoing at Nikhef to increase the area by tiling 4 readout chips on one sensor chip and by tiling many sensors into a large-area panel. When used in x-ray Radiography or CT-imaging, our detectors offer the possibility to perform Spectroscopic Imaging, facilitating the recognition of different tissues and reducing the amount of contrast agents that a patient will be exposed to. For scientific applications at synchrotrons or free electron lasers, time-resolved imaging becomes possible on the < 10 nanosecond timescale.