学术报告:Development of Hybrid X-ray Detectors at PSI

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报告题目:Development of Hybrid X-ray Detectors at PSI
报 告 人:Jiaguo Zhang (Paul Scherrer Institute)
报告时间:2018年7月12日(星期四)上午10:00-11:30
报告地点:张江园区科研楼503会议室
报告摘要:

The detector group of the Swiss Light Source at the Paul Scherrer Institute (PSI) develops cutting-edge hybrid X-ray detectors in-house, including photon-counting detectors for synchrotron radiation sources and charge-integrating detectors for Free-Electron Lasers (FELs). In this talk, an overview of the detector development at PSI will be given.
In addition, Gotthard-II, a silicon micro-strip detector developed for the European X-ray Free-Electron Laser (XFEL.EU), will be discussed. The potential scientific applications of Gotthard-II include X-ray absorption/emission spectroscopy, hard X-ray high resolution single-shot spectrometry (HiREX), energy dispersive experiments at 4.5 MHz frame rate, beam diagnostics, as well as veto signal generation for imaging detectors at the XFEL.EU. Gotthard-II uses a silicon microstrip sensor with a pitch of 50 μm or 25 μm and with 1280 or 2560 channels wire-bonded to readout chips (ROCs). In the ROC, an adaptive gain switching preamplifier (PRE), a fully differential Correlated-Double-Sampling (CDS) stage, an Analog-to- Digital Converter (ADC) as well as a Static Random-Access Memory (SRAM) capable of storing all the 2700 images in an XFEL bunch train will be implemented. Several prototypes with different designs of analogue front-end (PRE and CDS) and ADC test structure have been fabricated in UMC-110nm technology and their performance has been evaluated according to the XFEL.EU specifications. In addition, a prototype with complete circuit chain of 8 channels including analogue front-end, ADC and SRAM has been designed and fabricated. The performance of the prototype in terms of noise, linearity, dynamic range, coupling between channels and speed have been investigated and will be discussed.

报告人简介:

张家国,现瑞士保罗谢尔研究所(PSI)博士后。主要从事用于欧洲X射线自由电子激光(XFEL.EU)的半导体像素(AGIPD)和条形探测器(Gotthard-II)的研发、抗辐射传感器的优化设计、以及半导体辐射损伤等基础研究工作。作为主要完成人,完成了欧洲X射线自由电子激光对半导体材料的表面辐射损伤课题,为AGIPD探测器设计了具有抗辐射性质的硅半导体像素传感器。现阶段主要工作包括为XFEL.EU研发Gotthard-II探测器,以及低增益雪崩二极管、碳化硅和三维传感器的基础研究。

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